Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width.

ABSTRACT: Augmented reality and visual reality (AR and VR) microdisplays require micro light emitting diodes (μLEDs) with an ultrasmall dimension (≤5 μm), high external quantum efficiency (EQE), and narrow spectral line width. Unfortunately, dry etching which is the most crucial step for the fabrication of μLEDs in current approaches introduces severe damages, which seem to become an insurmountable challenge for achieving ultrasmall μLEDs with high EQE. Furthermore, it is well-known that μLEDs which require InGaN layers as an emitting region naturally exhibit significantly broad spectral line width, which becomes increasingly severe toward long wavelengths such as green. In this paper, we have reported a combination of our selective overgrowth approach developed very recently and epitaxial lattice-m

SUBMITTER: Bai J 

PROVIDER: S-EPMC7315628 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature