Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process.

ABSTRACT: In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1-xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample depos

SUBMITTER: Vivaldo I 

PROVIDER: S-EPMC7321575 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature