A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations.

ABSTRACT: A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a

SUBMITTER: Wu J 

PROVIDER: S-EPMC7321647 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature