Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO₃.

ABSTRACT: Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO₃ thin films for the direct observation of ferroelectric band skewing structure as the depth profiles of atomic orbitals. The depth-resolved electronic band structure consists of three depth regions: a potential slope a

SUBMITTER: Oshime N 

PROVIDER: S-EPMC7329818 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature