Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device.

ABSTRACT: : In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0-0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic-inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite fi

SUBMITTER: Hsiao YW 

PROVIDER: S-EPMC7353342 | biostudies-literature | 2020 Jun

REPOSITORIES: biostudies-literature