Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature.

ABSTRACT: Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization in

SUBMITTER: Khokhriakov D 

PROVIDER: S-EPMC7374568 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature