Time-dependent plasticity in silicon microbeams mediated by dislocation nucleation.

ABSTRACT: Understanding deformation mechanisms in silicon is critical for reliable design of miniaturized devices operating at high temperatures. Bulk silicon is brittle, but it becomes ductile at about 540 °C. It creeps (deforms plastically with time) at high temperatures (∼800 °C). However, the effect of small size on ductility and creep of silicon remains elusive. Here, we report that silicon at small scales may deform plastically with time at lower temperatures (400 °C) above a threshold stress. We achieve this stress by bending single-crystal silicon microbeams using an in situ thermomechanical testing stage. Small size, together with bending, localize high stress near the surface of the beam close to the anchor. This localization offers flaw tolerance, allowing ductility to win over fracture.

SUBMITTER: Elhebeary M 

PROVIDER: S-EPMC7382262 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature