Low Voltage Operating 2D MoS₂ Ferroelectric Memory Transistor with Hf_1-xZr_xO₂ Gate Structure.

ABSTRACT: Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf_1-xZr_xO₂ (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS₂) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hystere

SUBMITTER: Zhang S 

PROVIDER: S-EPMC7396413 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature