Doping of MoTe₂ via Surface Charge Transfer in Air.

ABSTRACT: Doping is a key process by which the concentration and type of majority carriers can be tuned to achieve desired conduction properties. The common way of doping is via bulk impurities, as in the case of silicon. For van der Waals bonded semiconductors, control over bulk impurities is not as well developed, because they may either migrate between the layers or bond with the surfaces or interfaces becoming undesired scattering centers for carriers. Herein, we investigate by means of Kelvin probe force microscopy (KPFM) and density functional theory calculations (DFT) the doping of MoTe₂ via surface charge transfer occurring in air. Using DFT, we show that oxygen molecules physisorb on the surface and increase its work function (compared to pristine surfaces) toward p-type b

SUBMITTER: Stan G 

PROVIDER: S-EPMC7425619 | biostudies-literature | 2020 Apr

REPOSITORIES: biostudies-literature