Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition.

ABSTRACT: Nb-doped SrSnO3 (SSNO) thin films were epitaxially grown on LaAlO3(001) single-crystal substrates using pulsed laser deposition under various oxygen pressures and substrate temperatures. The crystalline structure, electrical, and optical properties of the films were investigated in detail. X-ray diffraction results show that the cell volume of the films reduces gradually with increasing oxygen pressure while preserving the epitaxial characteristic. X-ray photoelectron spectroscopy analysis confirms the Nb5+ oxidation state in the SSNO films. Hall-effect measurements were performed and the film prepared at 0.2 Pa with the 780 °C substrate temperature exhibits the lowest room-temperature resistivity of 31.3 mΩcm and Hall mobility of 3.31 cm2/Vs with a carrier concentration at 6.03 × 1019/cm3

SUBMITTER: Li K 

PROVIDER: S-EPMC7431481 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature