Ultrathin Ion-Sensitive Field-Effect Transistor Chips with Bending-Induced Performance Enhancement.

ABSTRACT: Flexible multifunctional sensors on skin or wearables are considered highly suitable for next-generation noninvasive health care devices. In this regard, the field-effect transistor (FET)-based chemical sensors such as ion-sensitive FETs (ISFETs) are attractive as, with the ultrathin complementary metal oxide semiconductor technology, they can enable a flexible or bendable sensor system. However, the bending-related stress or strain could change the output of devices on ultrathin chips (UTCs), and this has been argued as a major challenge hindering the advancement and use of this technology in applications such as wearables. This may not be always true, as with drift-free ISFETs, we show that bending could also enhance the performance of UTCs. Through fine control of bending radius in the

SUBMITTER: Vilouras A 

PROVIDER: S-EPMC7461133 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature