Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges.

ABSTRACT: The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material syst

SUBMITTER: Celano U 

PROVIDER: S-EPMC7466465 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature