Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates.

ABSTRACT: Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III-VI 2D lay

SUBMITTER: Sorokin SV 

PROVIDER: S-EPMC7475857 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature