Effective silicon production from SiCl₄ source using hydrogen radicals generated and transported at atmospheric pressure.

ABSTRACT: In the Siemens method, high-purity Si is produced by reducing SiHCl₃ source gas with H₂ ambient under atmospheric pressure. Since the pyrolysis of SiHCl₃, which produces SiCl₄ as a byproduct, occurs dominantly in the practical Siemens process, the Si yield is low (~30%). In the present study, we generated hydrogen radicals (H-radicals) at pressures greater than 1 atm using tungsten filaments and transported the H-radicals into a reactor. On the basis of the absorbance at 600 nm of WO₃-glass exposed to H-radicals in the reactor, we observed that H-radicals with a density of ~1.1 × 10¹² cm^-3 were transported approximately 30 cm under 1 atm. When SiCl₄ was supplied as a source into the reactor containing H

SUBMITTER: Okamoto Y 

PROVIDER: S-EPMC7476485 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature