Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al₂O₃ gate dielectrics on graphene field effect transistors.

ABSTRACT: Here, we investigate the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional buffer layer for plasma enhanced atomic layer deposition (PE-ALD) of Al₂O₃ on graphene for top gated field effect transistors (FETs). The reactive nature of PE-ALD enables deposition of thin (2 nm) dielectrics directly on graphene and other two-dimensional materials without the need for a seed or functionalization layer; however, this also leads to significant oxidation of the graphene layer as observed by Raman. In FETs, we find this oxidation destroys conductivity in the graphene channel. By transferring thin (1.6 nm) MOCVD BN layers on top of graphene channels prior to PE-ALD, the graphene is protected from oxidation enabling BN/Al₂O

SUBMITTER: Snure M 

PROVIDER: S-EPMC7477096 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature