Ultrahigh drive current and large selectivity in GeS selector.

ABSTRACT: Selector devices are indispensable components of large-scale nonvolatile memory and neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. However, current ovonic threshold switching devices rely heavily on intricate control of material stoichiometry and generally suffer from toxic and complex dopants. Here, we report on a selector with a large drive current density of 34 MA cm^-2 and a ~10⁶ high nonlinearity, realized in an environment-friendly and earth-abundant sulfide binary semiconductor, GeS. Both experiments and first-principles calculations reveal Ge pyramid-dominated network and high density of near-valen

SUBMITTER: Jia S 

PROVIDER: S-EPMC7493911 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature