Efficient MoWO₃/VO₂/MoS₂/Si UV Schottky photodetectors; MoS₂ optimization and monoclinic VO₂ surface modifications.

ABSTRACT: The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS₂) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO₂. MoWO₃/VO₂/MoS₂ photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structur

SUBMITTER: Basyooni MA 

PROVIDER: S-EPMC7522211 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature