Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation.

ABSTRACT: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ T_c), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7

SUBMITTER: Pentin I 

PROVIDER: S-EPMC7546726 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature