PN/PAs-WSe₂ van der Waals heterostructures for solar cell and photodetector.

ABSTRACT: By first-principles calculations, we investigate the geometric stability, electronic and optical properties of the type-II PN-WSe₂ and type-I PAs-WSe₂ van der Waals heterostructures(vdWH). They are p-type semiconductors with indirect band gaps of 1.09 eV and 1.08 eV based on PBE functional respectively. By applying the external gate field, the PAs-WSe₂ heterostructure would transform to the type-II band alignment from the type-I. With the increasing of magnitude of the electric field, two heterostructures turn into the n-type semiconductors and eventually into metal. Especially, PN/PAs-WSe₂ vdWH are both high refractive index materials at low frequencies and show negative refractive index at high frequencies. Because of the steady absorption in u

SUBMITTER: Zheng X 

PROVIDER: S-EPMC7560845 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature