Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.

ABSTRACT: Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles with Mg concentrations of 1 × 10¹⁹ cm^-3. The major defect species in an as-implanted sample was determined to be Ga-vacancy related defects such as a complex between Ga and N vacancies. The sample was annealed under a nitrogen pressure of 1 GPa in a temperature range of 1000-1480 °C without a protective capping layer. Compared with the results for Mg-implanted GaN annealed with an AlN capping layer, the defect concentration was decreased by the cap-less annealing, suggesting that the surface of the sample was an effective sink for vacancies migrating toward the surface. Depth distributions of Mg after annealing

SUBMITTER: Uedono A 

PROVIDER: S-EPMC7562725 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature