A 0.026 mm2 Time Domain CMOS Temperature Sensor with Simple Current Source.

ABSTRACT: This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm2 because it adopts a simple current source consisting of an n-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from -1.0 to +0.7 °C over the temperature range of 0 to 100 °C aft

SUBMITTER: Park S 

PROVIDER: S-EPMC7599990 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature