Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization.

ABSTRACT: We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility (µ_FE) and on/off current

SUBMITTER: On N 

PROVIDER: S-EPMC7606507 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature