Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes.

ABSTRACT: Epitaxial growth of III-nitrides on 2D materials enables the realization of flexible optoelectronic devices for next-generation wearable applications. Unfortunately, it is difficult to obtain high-quality III-nitride epilayers on 2D materials such as hexagonal BN (h-BN) due to different atom hybridizations. Here, the epitaxy of single-crystalline GaN films on the chemically activated h-BN/Al₂O₃ substrates is reported, paying attention to interface atomic configuration. It is found that chemical-activated h-BN provides B-O-N and N-O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga-polar GaN films with a flat surface. The h-BN is also found to be effective in modifying the compressive strain in GaN film

SUBMITTER: Liu F 

PROVIDER: S-EPMC7610270 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature