In Situ Study of Molecular Doping of Chlorine on MoS₂ Field Effect Transistor Device in Ultrahigh Vacuum Conditions.

ABSTRACT: We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS₂ channel when the channel part is exposed to Cl₂ gas. The gas exposure and the electrical measurement of the MoS₂ FET were executed with in situ ultrahigh-vacuum (UHV) conditions in which the surface analysis techniques were equipped. This makes it possible to detect how much sensitivity the MoS₂ FET can provide and understand the surface properties. With the Cl₂ gas exposure to the channel, the plot of the drain current versus the gate voltage (I _d-V _g curve) shifts monotonically toward the positive direction of V _g, suggesting that the adsorbate acts as an electro

SUBMITTER: Trung NT 

PROVIDER: S-EPMC7643195 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature