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Multi-phase-field simulation of microstructure evolution in metallic foams.

ABSTRACT: This paper represents a model for microstructure formation in metallic foams based on the multi-phase-field approach. The model allows to naturally account for the effect of additives which prevent two gas bubbles from coalescence. By applying a non-merging criterion to the phase fields and at the same time raising the free energy penalty associated with additives, it is possible to completely prevent coalescence of bubbles in the time window of interest and thus focus on the formation of a closed porous microstructure. On the other hand, using a modification of this criterion along with lower free energy barriers we investigate with this model initiation of coalescence and the evolution of open structures. The method is validated and used to simulate foam structure formation both in two and three dimensions.

SUBMITTER: Vakili S

PROVIDER: S-EPMC7673141 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature

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Multi-phase-field simulation of microstructure evolution in metallic foams.

Vakili Samad S Steinbach Ingo I Varnik Fathollah F

Scientific reports 20201117 1

This paper represents a model for microstructure formation in metallic foams based on the multi-phase-field approach. The model allows to naturally account for the effect of additives which prevent two gas bubbles from coalescence. By applying a non-merging criterion to the phase fields and at the same time raising the free energy penalty associated with additives, it is possible to completely prevent coalescence of bubbles in the time window of interest and thus focus on the formation of a clos ...[more]

PMID: 33203868

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Project description:We analyze the ferroelectric domain-wall induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (MFIS) stacks through phase-field simulations by self-consistently solving time-dependent Ginzburg Landau equation, Poisson's equation and semiconductor charge equations. Considering Hf0.5Zr0.5O2 as the ferroelectric material, we study 180° ferroelectric domain formation in MFIM and MFIS stacks and their polarization switching characteristics. Our analysis signifies that the applied voltage-induced polarization switching via soft domain-wall displacement exhibits non-hysteretic characteristics. In addition, the change in domain-wall energy, due to domain-wall displacement, exhibits a long-range interaction and thus, leads to a non-homogeneous effective local negative permittivity in the ferroelectric. Such effects yield an average negative effective permittivity that further provides an enhanced charge response in the MFIM stack, compared to Metal-Insulator-Metal. Furthermore, we show that the domain-wall induced negative effective permittivity is not an intrinsic property of the ferroelectric material and therefore, is dependent on its thickness, the gradient energy coefficient and the in-plane permittivity of the underlying insulator. Similar to the MFIM stack, MFIS stack also exhibits an enhanced charge/capacitance response compared to Metal-Oxide-Semiconductor (MOS) capacitor. Simultaneously, the multi-domain state of the ferroelectric induces non-homogeneous potential in the underlying insulator and semiconductor layer. At low applied voltages, such non-homogeneity leads to the co-existence of electrons and holes in an undoped semiconductor. In addition, we show that with the ferroelectric layer being in the 180° multi-domain state, the minimum potential at the ferroelectric-dielectric interface and hence, the minimum surface potential in the semiconductor, does not exceed the applied voltage (in-spite of the local differential amplification and charge enhancement).

Dataset Information

Multi-phase-field simulation of microstructure evolution in metallic foams.

Publications

Multi-phase-field simulation of microstructure evolution in metallic foams.

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