High-Uniformity Threshold Switching HfO₂-Based Selectors with Patterned Ag Nanodots.

ABSTRACT: High-performance selector devices are essential for emerging nonvolatile memories to implement high-density memory storage and large-scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high-uniformity threshold switching HfO₂-based selectors are fabricated by using e-beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross-point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (<1 pA), high on/off ratio (>10⁸), high endurance (>10⁸ cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag

SUBMITTER: Li Y 

PROVIDER: S-EPMC7675059 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature