Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy.

ABSTRACT: Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (<1 nW Hz^-1/2) and high responsivities (>100 V/W). Nano-engineering an NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetr

SUBMITTER: Pogna EAA 

PROVIDER: S-EPMC7677312 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature