Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO₂/TaO_x/TiN Artificial Synaptic Device.

ABSTRACT: Here, we propose a Pt/HfO₂/TaO_x/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO₂/TaO_x/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resistive switching characteristics are achieved by the asymmetric device stack, which is an advantage of the current suppression in the crossbar array structure. The results show that the programmed data are lost over time and that the decay rate, which is verified from the retention test, can be adjusted by controlling the compliance current (CC). Based on these properties, we emulate bio-synaptic characteristics, such as short-term plasticity (STP

SUBMITTER: Ryu H 

PROVIDER: S-EPMC7693614 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature