Promoted Hole Transport Capability by Improving Lateral Current Spreading for High-Efficiency Quantum Dot Light-Emitting Diodes.

ABSTRACT: Carrier imbalance resulting from stronger electron injection from ZnO into quantum-dot (QD) emissive layer than hole injection is one critical issue that constrains the performance of QDs-based light-emitting diodes (QLEDs). This study reports highly efficient inverted QLEDs enabled by periodic insertion of MoO₃ into (4,4'-bis(N-carbazolyl)-1,1'-biphenyl) (CBP) hole transport layer (HTL). The periodic ultrathin MoO₃/CBP-stacked HTL results in improved lateral current spreading for the QLEDs, which significantly relieves the crowding of holes and thus enhances hole transport capability across the CBP in QLEDs. Comprehensive analysis on the photoelectric properties of devices shows that the optimal thickness for MoO₃ interlayer inserted in CBP is only

SUBMITTER: Wu Q 

PROVIDER: S-EPMC7709982 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature