MoS₂ thin films from a (N ^t Bu)₂(NMe₂)₂Mo and 1-propanethiol atomic layer deposition process.

ABSTRACT: Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS₂ rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. We have developed a new thermal atomic layer deposition (ALD) process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS₂-containing amorphous films. We observe self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycli

SUBMITTER: Kalanyan B 

PROVIDER: S-EPMC7713506 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature