Silicon carbide formation from methane and silicon monoxide.

ABSTRACT: Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with methane could have several advantages. SiC formation was studied in argon, hydrogen and methane containing atmospheres at 1650 °C and 1750 °C. SiO gas was generated from pellets of a 1:2 molar ratio of SiC and silica (SiO₂). The reactions were investigated through CO off-gas analysis in conjunction with measuring the weight change. After each experiment, the reaction products were examined in a scanning electron microscope with secondary electrons and through energy-dispersive X-ray spectr

SUBMITTER: Aarnæs TS 

PROVIDER: S-EPMC7733506 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature