Seamlessly Splicing Metallic Sn x Mo1- x S2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor.
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ABSTRACT: Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S Sn x Mo1- x S2/MoS2 heterostructure is precisely prepared with in situ growth of metallic Sn x Mo1- x S2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocataly
SUBMITTER: Shao G
PROVIDER: S-EPMC7739950 | biostudies-literature | 2020 Dec
REPOSITORIES: biostudies-literature
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