Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires.

ABSTRACT: The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core-shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τ _PL ) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occur

SUBMITTER: Jiang N 

PROVIDER: S-EPMC7750184 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature