The Weak 3D Topological Insulator Bi₁₂ Rh₃ Sn₃ I₉.

ABSTRACT: Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi₁₂ Rh₃ Sn₃ I₉ , which is structurally closely related to Bi₁₄ Rh₃ I₉ - a stable, layered material. In fact, Bi₁₄ Rh₃ I₉ is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of

SUBMITTER: Le Anh M 

PROVIDER: S-EPMC7756808 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature