Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features.

ABSTRACT: The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. In order to encourage the hysteresis loops, we treated the bottom side of MoTe2 flake with deep ultraviolet light in ambient conditions. Here, we modulate the short-term and long-term memory effects due to the trapping and de-trapping of electron events in few layers of a MoTe2 transistor. However, MoTe2 FETs are investigated to reveal the time constants of electron trapping/de-trapping while applying the gate-voltage pulses. Our devices exploit the hysteresis effect in the transfer curves of MoTe2 FETs to

SUBMITTER: Rehman S 

PROVIDER: S-EPMC7761516 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature