Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography.

ABSTRACT: Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even smaller pitches up to 8 nm half pitch (HP). In anticipation of this high NA technology, it is crucial to assess the readiness of the current resist materials for the high NA regime to comply with the demanding requirements of resolution, line-edge roughness, and sensitivity (RLS). The achievable tighter pitches require lower film thicknesses for both resist and underlying transfer layers. A concern that is tied to the thinning down is the potential change in resist properties and behavior due to the interaction with the underlayer. To increase the f

SUBMITTER: Severi J 

PROVIDER: S-EPMC7762983 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature