Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.

ABSTRACT: In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO2/Si3N4/SiO2) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching and synaptic behaviors were improved by inserting a Si3N4 layer between the HfO2 and SiO2 layers. The electric field within SiO2 was mitigated, thus reducing the current overshoot in the trilayer device. The reset current was considerably reduced in the trilayer device compared to the bilayer device without a Si3N4 layer. Moreover, the nonlinear characteristics in the low-resistance state are helpful for implementing high-density memory. Th

SUBMITTER: Ryu H 

PROVIDER: S-EPMC7763874 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature