Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes.

ABSTRACT: Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illumination mechanism for the silicon-based LEDs. We designed a Si/thick dielectric layer/graphene/AlGaN heterostructured LED via the van der Waals integration method. In forward bias, the Si/thick dielectric (HfO2-50 nm or SiO2-90 nm) heterostructure accumulates numerous hot electrons at the interface. At sufficient operational voltages, the hot electrons from the interface of the Si/dielectric can cross the thick dielectric barrier via the electron-impact ionization mechanism, which results in the emission of more electrons that can be injected

SUBMITTER: Manjunath NK 

PROVIDER: S-EPMC7767542 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature