Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing.

ABSTRACT: With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In₂Se₃ ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible ad

SUBMITTER: Wang S 

PROVIDER: S-EPMC7782550 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature