Simulation of infrared spectra of trace impurities in silicon wafers based on the multiple transmission-reflection infrared method.

ABSTRACT: The content of trace impurities, such as interstitial oxygen and substitutional carbon, in silicon is crucial in determining the mechanical and physical characteristics of silicon wafers. The traditional infrared (IR) method is adopted as a normal means to analyse their concentration at home and abroad, but there are two problems. The first problem is the poor representativeness of a single local sampling point because the impurity distribution in a solid sample is not as uniform as that in a liquid sample. The second problem is that interference fringes appear in the infrared spectra of the sample due to the thin wafer (≤ 300 μm thick). Based on this, controversial issues existed regarding the measured trace impurity concentrations between wafer manufacturers and solar cell assembly busin

SUBMITTER: Lu X 

PROVIDER: S-EPMC7806787 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature