Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light.

ABSTRACT: A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm² which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the li

SUBMITTER: Yao X 

PROVIDER: S-EPMC7818373 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature