Charge transport mechanism in the forming-free memristor based on silicon nitride.

ABSTRACT: Nonstoichiometric silicon nitride SiN_x is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill-Adachi model of overlapping Coulomb potentials, Makram-Ebeid and Lannoo mo

SUBMITTER: Gismatulin AA 

PROVIDER: S-EPMC7843651 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature