ZrO_x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.

ABSTRACT: Here we report the ZrO_x-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V_GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO_x/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO₂ and ZrO_x films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrO_x-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrO_x. The s

SUBMITTER: Zhang S 

PROVIDER: S-EPMC7855158 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature