Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces.

ABSTRACT: The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and d

SUBMITTER: Schuwalow S 

PROVIDER: S-EPMC7887586 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature