Understanding and Mapping Sensitivity in MoS₂ Field-Effect-Transistor-Based Sensors.

ABSTRACT: Sensors based on two-dimensional (2D) field-effect transistors (FETs) are extremely sensitive and can detect charged analytes with attomolar limits of detection (LOD). Despite some impressive LODs, the operating mechanisms and factors that determine the signal-to-noise ratio in 2D FET-based sensors remain poorly understood. These uncertainties, coupled with an expansive design space for sensor layout and analyte positioning, result in a field with many reported highlights but limited collective progress. Here, we provide insight into sensing mechanisms of 2D molybdenum disulfide (MoS₂) FETs by realizing precise control over the position and charge of an analyte using a customized atomic force microscope (AFM), with the AFM tip acting as an analyte. The sensitivity of the MoS

SUBMITTER: Noyce SG 

PROVIDER: S-EPMC7895328 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature