Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

ABSTRACT: Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfaces of 2D materials can shape their electronic properties. Although much attention has focused on engineering the contact and dielectric interfaces in 2D material-based transistors to boost their drive current, less is understood about how to tune these interfaces to improve the long-term stability of devices. In this work, we evaluated molybdenum disulfide (MoS₂) transistors under continuous electrical stress for periods lasting up to several days. During stress in ambient air, we observed temporary threshold voltage shifts that inc

SUBMITTER: Doherty JL 

PROVIDER: S-EPMC7895421 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature