Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates.

ABSTRACT: Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The "diode-like" currents through the symmetric atomic layer deposited (ALD) HfO₂/Al₂O₃/HfO₂… nanolayers with a highest rectification coefficient 10³ are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al₂O₃ thickness values of 8-10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the bu

SUBMITTER: Popov VP 

PROVIDER: S-EPMC7912112 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature