Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress.

ABSTRACT: In this study we present the new power electronic circuit implementation to create the arbitrary near-rectangular electromagnetic pulse. To this end, we develop a parallel- Insulated-gate bipolar transistors (IGBT)-based magnetic pulse generator utilizing the H-bridge architecture. This approach effectively reduces the current stress on the power switches while maintaining a simple structure using a single DC source and energy storage capacitor. Experimental results from the circuit characterization show that the proposed circuit is capable of repeatedly generating near-rectangular magnetic pulses and enables the generation of configurable and stable magnetic pulses without causing excessive device stresses. The introduced device enables the production of near-rectangular pulse trains for

SUBMITTER: Memarian Sorkhabi M 

PROVIDER: S-EPMC7925468 | biostudies-literature | 2021

REPOSITORIES: biostudies-literature