Enhanced ferroelectric switching speed of Si-doped HfO₂ thin film tailored by oxygen deficiency.

ABSTRACT: Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO₂ thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO₂ thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO₂ phase. Rapid high-temperature (800 °C) annealing of the HfO₂ film acc

SUBMITTER: Lee K 

PROVIDER: S-EPMC7973512 | biostudies-literature | 2021 Mar

REPOSITORIES: biostudies-literature