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ABSTRACT:
SUBMITTER: Wozny J
PROVIDER: S-EPMC7975987 | biostudies-literature | 2021 Mar
REPOSITORIES: biostudies-literature
Wozny Janusz J Kovalchuk Andrii A Podgorski Jacek J Lisik Zbigniew Z
Materials (Basel, Switzerland) 20210306 5
This paper presents an efficient method to calculate the influence of structural defects on the energy levels and energy band-gap for the 4H-SiC semiconductor. The semi-empirical extended Hückel method was applied to both ideal 4H-SiC crystal and different structures with defects like vacancies, stacking faults, and threading edge dislocations. The Synopsys QuatumATK package was used to perform the simulations. The results are in good agreement with standard density functional theory (DFT) metho ...[more]